SI4812BDY-T1-E3 Vishay, SI4812BDY-T1-E3 Datasheet

SI4812BDY-T1-E3

Manufacturer Part Number

SI4812BDY-T1-E3

Description

MOSFET N-CH 30V 7.3A 8-SOIC

Manufacturer

Vishay

Datasheet

1.SI4812BDY-T1-E3.pdf (6 pages)

Specifications of SI4812BDY-T1-E3

Transistor Polarity

N-Channel

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

16 mOhm @ 9.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

7.3A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

13nC @ 5V

Power - Max

1.4W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Minimum Operating Temperature

- 55 C

Configuration

Single Quad Drain Triple Source

Resistance Drain-source Rds (on)

0.016 Ohm @ 10 V

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

7.3 A

Power Dissipation

1400 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Continuous Drain Current Id

9.5A

Drain Source Voltage Vds

30V

On Resistance Rds(on)

21mohm

Rds(on) Test Voltage Vgs

20V

Threshold Voltage Vgs Typ

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SI4812BDY-T1-E3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4812BDY-T1-E3

Manufacturer:

VISHAY

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4812BDY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 6
Download datasheet (106Kb)

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

Document Number: 73038

S-83039-Rev. D, 29-Dec-08

Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

Continuous Drain Current (T

Pulsed Drain Current (MOSFET)

Continuous Source Current (MOSFET Diode Conduction)

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

Single Pulse Avalanche Current

Avalanche Energy

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient (t ≤ 10 s)

Maximum Junction-to-Ambient (t = Steady State)

Maximum Junction-to-Foot (t = Steady State)

MOSFET PRODUCT SUMMARY

SCHOTTKY PRODUCT SUMMARY

(V)

N-Channel 30-V (D-S) MOSFET with Schottky Diode

Diode Forward Voltage

Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

T op V i e w

0.021 at V

SO-8

0.016 at V

0.50 V at 1.0 A

DS(on)

= 150 °C) (MOSFET)

(V)

(Ω)

= 4.5 V

= 10 V

a, b

= 25 °C, unless otherwise noted

9.5

7.7

1.4

L = 0.1 mH

a, b

MOSFET

(A)

Schottky

Device

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

Symbol

FEATURES

• Halogen-free According to IEC 61249-2-21

• LITTLE FOOT

• 100 % R

, T

thJA

thJF

Available

stg

N-channel MOSFET

Tested

Typical

10 s

9.5

7.7

2.1

1.4

2.5

1.6

2.0

1.3

Plus Power MOSFET

- 55 to 150

Limit

± 20

1.25

Steady State

Maximum

Vishay Siliconix

100

7.3

5.9

1.2

0.8

1.4

0.9

1.2

0.8

Si4812BDY

Schottky Diode

www.vishay.com

°C/W

Unit

°C

Related parts for SI4812BDY-T1-E3

SI4812BDY-T1-E3 Summary of contents

Page 1

... Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free) Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) ...

Page 2

... Si4812BDY Vishay Siliconix MOSFET AND SCHOTTKY SPECIFICATIONS T Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET and Schottky) a On-State Drain Current a R Drain-Source On-State Resistance a Forward Transconductance a Schottky Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... D On-Resistance vs. Drain Current 9 Total Gate Charge (nC) g Gate Charge Document Number: 73038 S-83039-Rev. D, 29-Dec- 1300 1040 Si4812BDY Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 780 520 C oss 260 C rss Drain-to-Source Voltage (V) ...

Page 4

... Si4812BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.01 0.001 0.0001 0.00001 Junction Temperature (°C) J Reverse Current (Schottky) www.vishay.com °C 0.8 1.0 1.2 100 125 150 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73038. Document Number: 73038 S-83039-Rev. D, 29-Dec- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Si4812BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords

si4812bdy
si4812b
si4812
SI4812BDY-T1-E3 datasheet
SI4812BDY-T1-E3 data sheet
SI4812BDY-T1-E3 pdf datasheet
SI4812BDY-T1-E3 component
SI4812BDY-T1-E3 part
SI4812BDY-T1-E3 distributor
SI4812BDY-T1-E3 RoHS
SI4812BDY-T1-E3 datasheet download