MTB30P06VT4G ON Semiconductor, MTB30P06VT4G Datasheet - Page 2

• Manufacturer Part Number: MTB30P06VT4G
• Description: MOSFET P-CH 60V 30A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB30P06VT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Forward Transconductance Gfs (max / Min): 7.9 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 30 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTB30P06VT4GOS; MTB30P06VT4GOS; MTB30P06VT4GOSTR

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−Source On−Resistance (V
Drain−Source On−Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V
Temperature Coefficient (Positive)
(V
(V
(V
Threshold Temperature Coefficient (Negative)
(V
(V
(V
(See Figure 8)
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
(Measured from the source lead 0.25″ from package to source bond pad)
GS
DS
DS
DS
GS
GS
DS
= 0 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= V
= 10 Vdc, I
= 10 Vdc, I
= 8.3 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
D
= 0.25 mAdc)
GS
GS
= 30 Adc)
= 15 Adc, T
= 15 Adc)
= 0 Vdc)
= 0 Vdc, T
GS
J
J
= ± 15 Vdc, V
Characteristic
= 150°C)
= 150°C)
GS
(V
(T
(I
= 10 Vdc, I
DS
S
J
= 30 Adc, V
= 25°C unless otherwise noted)
= 25 Vdc, V
(V
(V
V
(I
(I
DS
GS
S
S
DD
DS
= 30 Adc, V
= 30 Adc, V
= 0 Vdc)
dI
= 10 Vdc, R
= 30 Vdc, I
= 48 Vdc, I
D
V
S
/dt = 100 A/ms)
= 15 Adc)
GS
GS
http://onsemi.com
GS
= 10 Vdc)
MTB30P06V
= 0 Vdc, T
= 0 Vdc, f = 1.0 MHz)
GS
GS
D
D
G
= 30 Adc,
= 30 Adc,
= 0 Vdc)
= 0 Vdc,
= 9.1 W)
2
J
= 150°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
GS(th)
DS(on)
C
C
V
g
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
L
L
t
t
t
oss
t
t
FS
SD
RR
iss
rss
rr
a
b
r
f
D
S
T
1
2
3
Min
2.0
5.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.067
0.965
1562
14.7
25.9
52.4
Typ
524
154
175
107
2.6
5.3
2.0
7.9
9.0
2.3
1.9
3.5
4.5
7.5
62
98
54
26
20
68
−
−
−
−
−
2190
Max
0.08
100
100
730
310
200
100
4.0
2.9
2.8
3.0
10
30
50
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W