MTB30P06VT4G ON Semiconductor, MTB30P06VT4G Datasheet - Page 3

• Manufacturer Part Number: MTB30P06VT4G
• Description: MOSFET P-CH 60V 30A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB30P06VT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Forward Transconductance Gfs (max / Min): 7.9 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 30 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTB30P06VT4GOS; MTB30P06VT4GOS; MTB30P06VT4GOSTR

0.12
0.08
0.06
0.04
0.02
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
60
50
40
30
20
10
0
0
1
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
T
J
V
= 25°C
V
I
D
−25
GS
GS
Figure 5. On−Resistance Variation with
= 15 A
V
Figure 1. On−Region Characteristics
= 10 V
GS
= 10 V
10
V
2
DS
= 10V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
T
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
20
25
and Temperature
4
Temperature
9 V
50
T
J
= 100°C
30
6
25°C
− 55°C
8 V
75
TYPICAL ELECTRICAL CHARACTERISTICS
100
40
8
125
50
10
http://onsemi.com
150
7 V
5 V
4 V
6 V
MTB30P06V
175
12
60
3
0.08
0.07
0.06
0.05
0.04
100
60
50
40
30
20
10
10
0
1
0
0
0
Figure 4. On−Resistance versus Drain Current
T
V
V
J
GS
DS
= 25°C
= 0 V
≥ 10 V
1
10
Figure 6. Drain−To−Source Leakage
Figure 2. Transfer Characteristics
10
V
V
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
Current versus Voltage
20
I
D
, DRAIN CURRENT (AMPS)
20
and Gate Voltage
3
T
V
J
30
100°C
GS
= 125°C
= 10 V
15 V
30
4
40
5
40
25°C
50
100°C
6
T
J
50
= −55°C
60
7
60
70
8