ATP203-TL-H SANYO, ATP203-TL-H Datasheet
ATP203-TL-H
Specifications of ATP203-TL-H
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ATP203-TL-H Summary of contents
Page 1
... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP203 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... Switching Time Test Circuit =15V 10V =38A =0.39Ω D PW=10μs D.C.≤1% G ATP203 P.G 50Ω S ATP203 Symbol Conditions V GS (off =10V =1mA | yfs | V DS =10V =38A R DS (on =38A =10V R DS (on =19A =4.5V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss ...
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... Gate-to-Source Voltage 1 0.1 1.0 10 Drain Current Time -- I D 1000 V DD =20V =10V 100 (on 0.1 1.0 10 Drain Current ATP203 100 V DS =10V Tc=25 ° 1.6 1.8 2.0 0 0.5 IT14000 25 Tc=25 ° C Single pulse --60 --40 --20 IT14002 100 = =10V 5 Single pulse 0.001 2 3 ...
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... Case Temperature °C Note on usage : Since the ATP203 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...