ATP203-TL-H SANYO, ATP203-TL-H Datasheet - Page 2

• Manufacturer Part Number: ATP203-TL-H
• Description: MOSFET N-CH 30V 75A ATPAK
• Manufacturer: SANYO

Specifications of ATP203-TL-H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 75A
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 2750pF @ 10V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1079-2

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10μs
D.C.≤1%
V IN
0.8
1
2.3
6.5
4
Parameter
2
2.3
V IN
50Ω
G
3
0.6
V DD =15V
D
S
I D =38A
0.55
R L =0.39Ω
ATP203
0.4
1.5
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V OUT
Symbol
0.4
V DS =10V, I D =1mA
V DS =10V, I D =38A
I D =38A, V GS =10V
I D =19A, V GS =4.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =15V, V GS =10V, I D =75A
V DS =15V, V GS =10V, I D =75A
V DS =15V, V GS =10V, I D =75A
I S =75A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
4.6
2.6
ATP203
0.4
Conditions
min
1.2
13
Ratings
typ
2750
1.02
450
265
420
130
6.3
9.5
5.6
22
24
75
44
14
max
13.5
2.6
8.2
1.2
No. A1318-2/4
Unit
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V