BSC079N03SG Infineon Technologies, BSC079N03SG Datasheet - Page 5

• Manufacturer Part Number: BSC079N03SG
• Description: MOSFET N-CH 30V 40A TDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC079N03SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2V @ 30µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 2230pF @ 15V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC079N03SGINTR; BSC079N03SGXT; BSC079N03SGXTINTR; BSC079N03SGXTINTR; SP000016414

Rev. 1.91
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
10 V
|>2|I
1
4.5 V
D
|R
1
DS(on)max
2
V
V
150 °C
DS
GS
[V]
[V]
3
25 °C
2
2.8 V
4
3.4 V
3.7 V
4 V
3.2 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
30
25
20
15
10
80
70
60
50
40
30
20
10
D
=f(I
5
0
0
); T
0
0
2.8 V
D
j
); T
=25 °C
GS
10
j
=25 °C
3 V
10
3.2 V
20
20
I
I
D
D
30
3.4 V
[A]
[A]
30
BSC079N03S G
40
40
50
3.7 V
4.5 V
10 V
4 V
2009-10-27
50
60