IRF6713STR1PBF International Rectifier, IRF6713STR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF6713STR1PBF
• Description: MOSFET N-CH 25V 22A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6713STR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2880pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 95 A
• Power Dissipation: 42 W
• Gate Charge Qg: 21 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6713STR1PBFTR

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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1000
100
100
80
60
40
20
10
0
1
0
25
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
T J = 150°C
T J = 25°C
T J = -40°C
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
100
Fig 14. Maximum Avalanche Energy vs. Drain Current
V GS = 0V
150
125
100
125
75
50
25
0
25
Starting T J , Junction Temperature (°C)
150
50
75
100
TOP
BOTTOM 17A
Fig 13. Typical Threshold Voltage vs. Junction
1000
0.01
3.0
2.5
2.0
1.5
1.0
0.5
100
0.1
10
1
-75 -50 -25
0.01
Fig11. Maximum Safe Operating Area
125
I D = 50µA
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
T A = 25°C
T J = 150°C
Single Pulse
I D
5.2A
6.2A
V DS , Drain-to-Source Voltage (V)
150
0.10
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
0
DC
25
1.00
50
10msec
100µsec
75 100 125 150
1msec
10.00
100.00
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