IRF6713STR1PBF International Rectifier, IRF6713STR1PBF Datasheet - Page 7

• Manufacturer Part Number: IRF6713STR1PBF
• Description: MOSFET N-CH 25V 22A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6713STR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2880pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 95 A
• Power Dissipation: 42 W
• Gate Charge Qg: 21 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6713STR1PBFTR

DirectFET™ Substrate and PCB Layout, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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