SPW16N50C3 Infineon Technologies, SPW16N50C3 Datasheet - Page 4

MOSFET N-CH 560V 16A TO-247

SPW16N50C3

Manufacturer Part Number
SPW16N50C3
Description
MOSFET N-CH 560V 16A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPW16N50C3

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
3.9V @ 675µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1600pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
560 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
16A
Drain Source Voltage Vds
560V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014472
SPW16N50C3IN
SPW16N50C3X
SPW16N50C3XK
SPW16N50C3XTIN
SPW16N50C3XTIN

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Inverse diode direct current,
pulsed
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Rev. 2.5
T
j
I
t
Q
I
SM
rr
rrm
rr
Pa
T
V
V
di
C
GS
R
F
/dt
8 02-11

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