IRF6618 International Rectifier, IRF6618 Datasheet

IRF6618

Manufacturer Part Number

IRF6618

Description

MOSFET N-CH 30V 30A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6618.pdf (11 pages)

Specifications of IRF6618

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.2 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

30A

Vgs(th) (max) @ Id

2.35V @ 250µA

Gate Charge (qg) @ Vgs

65nC @ 4.5V

Input Capacitance (ciss) @ Vds

5640pF @ 15V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MT

Configuration

Single Quad Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.2 m Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

29 A

Power Dissipation

2.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Fall Time

8.1 ns

Minimum Operating Temperature

- 40 C

Rise Time

71 ns

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6618TR

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Applicable DirectFET Package/Layout Pad (see p.8,9 for details)

Description

The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation

of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck

converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/

dt immunity for synchronous FET applications.

Notes through

www.irf.com

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

Techniques

STG

RoHS compliant containing no lead or bromide

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses

Low Switching Losses

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount

θ JA

θJA

θ JC

θJ-PCB

@ T

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Single Pulse Avalanche Energy

Avalanche Current

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

are on page 9

Parameter

@ 10V

IRF6618/IRF6618TR1

30V

DSS

Typ.

12.5

–––

1.0

-40 to + 150

3.4mΩ@V

2.2mΩ@V

Max.

0.022

170

240

±20

2.8

1.8

HEXFET

DS(on)

Max.

210

–––

1.4

max

packaging to achieve the

= 4.5V

= 10V

Power MOSFET

DirectFET™ ISOMETRIC

Units

W/°C

°C/W

43 nC

°C

11/16/05

Related parts for IRF6618

IRF6618 Summary of contents

Page 1

... IMPROVING previous best thermal resistance by 80%. The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 10V ≤60µs PULSE WIDTH ...

Page 4

150°C 100.00 10. 25°C 1.00 0.10 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 180 160 140 120 100 ...

Page 5

125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V DRIVER D.U.T R ...

Page 6

D.U.T + ƒ • • - • + ‚ „ R • G • • SD • Fig 18. Vds Vgs(th) Qgs1 Qgs2 6 Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current + ...

Page 7

DirectFET™ Outline Dimension, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. IT9(Ã7I TRIFFC AÃ 8CG9 SCI SÃ5R9ÃC ÃGG www.irf.com ...

Page 8

DirectFET™ Board Footprint, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1 CODE www.irf.com REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) METRIC IMPERIAL ...

Page 10

DirectFET™ Part Marking Notes: Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.75mH 25Ω ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Surface mounted ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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