IRF6618 International Rectifier, IRF6618 Datasheet - Page 2
![MOSFET N-CH 30V 30A DIRECTFET](/photos/5/53/55375/irf6618_sml.jpg)
IRF6618
Manufacturer Part Number
IRF6618
Description
MOSFET N-CH 30V 30A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6618.pdf
(11 pages)
Specifications of IRF6618
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.35V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 4.5V
Input Capacitance (ciss) @ Vds
5640pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MT
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
8.1 ns
Minimum Operating Temperature
- 40 C
Rise Time
71 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6618TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6618
Manufacturer:
IR
Quantity:
20 000
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Part Number:
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IR
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Part Number:
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IR
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Quantity:
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Part Number:
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Part Number:
IRF6618TR1PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6618TRPBF
Manufacturer:
IR
Quantity:
20 000
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
G
iss
oss
rss
g
sw
oss
rr
Q
Q
Q
Q
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
5640
1260
1.64
0.78
-5.7
–––
–––
–––
–––
–––
–––
–––
–––
570
–––
–––
1.7
4.0
1.0
8.1
23
43
12
15
12
19
28
21
71
27
43
46
-100
2.35
–––
––– mV/°C
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
2.2
3.4
5.0
1.0
2.2
1.2
65
23
89
65
69
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
See Fig. 16
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 24A
= 24A
= 25°C, I
= 25°C, I
= V
= 30V, V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 15V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 15V, V
= 0V
GS
, I
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
GS
= 250µA
= 24A
= 24A, V
= 24A
= 30A
= 24A
= 0V
= 0V
= 0V, T
= 0V
e
= 4.5V
D
e
www.irf.com
e
G
= 1mA
GS
J
= 150°C
e
= 0V
D
S
e