STB75NF20 STMicroelectronics, STB75NF20 Datasheet - Page 4

• Manufacturer Part Number: STB75NF20
• Description: MOSFET N-CH 200V 75A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB75NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 34 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3260pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 50 C
• Continuous Drain Current Id: 37A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5957-2

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
Q
fs
oss
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse Transfer
Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 16)
V
R
(see Figure 15)
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DD
G
DS
DS
DS
DS
GS
= 1mA, V
= 4.7Ω , V
= 10V
= 160V, I
= V
= 10V, I
= 15V
= 25V, f = 1 MHz,
=0
= 100V, I
= Max rating,
= Max rating @125°C
= ± 20V
Test conditions
Test conditions
Test conditions
GS
, I
,
I
D
GS
D
D
GS
STB75NF20 - STP75NF20 - STW75NF20
D
= 37A
= 37A
D
= 250µA
=75A,
= 0
= 10V,
= 37A
Min.
Min.
Min.
200
2
0.028
3260
Typ.
Typ.
Typ.
640
110
40
84
18
34
53
33
75
29
3
Max.
0.034
Max.
Max.
±100
10
1
4
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω