STB75NF20 STMicroelectronics, STB75NF20 Datasheet - Page 5

• Manufacturer Part Number: STB75NF20
• Description: MOSFET N-CH 200V 75A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB75NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 34 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3260pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 50 C
• Continuous Drain Current Id: 37A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5957-2

STB75NF20 - STP75NF20 - STW75NF20
Table 7.
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100 A/µs
T
I
di/dt = 100 A/µs
T
SD
SD
SD
j
j
= 25°C
= 150°C
= 75A, V
= 75A,V
= 75A, V
Test conditions
(see Figure 20)
(see Figure 20)
DD
GS
DD
= 100V
= 0
= 100V
Electrical characteristics
Min.
Typ.
2.18
222
267
19
22
3
Max. Unit
300
1.6
75
µC
µC
ns
ns
A
A
V
A
A
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