STK22N6F3 STMicroelectronics, STK22N6F3 Datasheet - Page 4

• Manufacturer Part Number: STK22N6F3
• Description: MOSFET N-CH 60V 22A POLARPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STK22N6F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 5.2W
• Mounting Type: Surface Mount
• Package / Case: PolarPak®
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 22 A
• Power Dissipation: 5.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10009-2

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
V
CASE
(BR)DSS
I
I
t
t
DS(on)
C
GS(th)
C
C
Q
Q
d(on)
d(off)
DSS
GSS
R
Q
oss
t
t
rss
iss
gs
gd
r
f
G
g
=25 °C unless otherwise specified)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
On/off states
DS
Dynamic
Switching times
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 14850 Rev 2
V
I
V
V
V
V
V
V
V
Figure 14
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
V
R
Figure 13
V
R
Figure 13
D
GS
GS
GS
DS
DS
DS
DS
DD
DD
DD
G
G
= 250 µA, V
=4.7 Ω, V
=4.7 Ω, V
= V
= 10 V, I
=48 V, I
= 30 V, I
=30 V, I
= Max rating,
= Max rating,Tc=125 °C
= ± 20V
=25 V, f=1 MHz, V
=10 V
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
D
D
GS
GS
= 11 A,
= 22 A
= 11 A
= 250 µA
= 11 A,
GS
= 10 V
= 10 V
= 0
GS
=0
Min.
Min.
60
Min.
2
-
-
-
-
-
-
-
-
0.0055 0.006
Typ.
2500
Typ.
536
0.9
Typ.
44
41
12
10
-
-
-
-
16
14
28
5
Max.
STK22N6F3
Max.
±
Max.
100
200
10
-
-
-
4
-
-
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
ns
ns
ns
ns
Ω
V
V