SPW24N60C3 Infineon Technologies, SPW24N60C3 Datasheet

MOSFET N-CH 650V 24.3A TO-247

SPW24N60C3

Manufacturer Part Number
SPW24N60C3
Description
MOSFET N-CH 650V 24.3A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPW24N60C3

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 15.4A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
24.3A
Vgs(th) (max) @ Id
3.9V @ 1.2mA
Gate Charge (qg) @ Vgs
135nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
240W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24.3 A
Power Dissipation
240000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014695
SPW24N60C3
SPW24N60C3IN
SPW24N60C3X
SPW24N60C3XK

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Please note the new package dimensions arccording to PCN 2009-134-A
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPW24N60C3
Rev. 2.5
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
Reverse diode dv/dt
D
D
C
C
= 10 A, V
= 24.3 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
C
Package
PG-TO247
= 25°C
4)
p
limited by T
AR
AR
limited by T
limited by T
j ma x
Ordering Code
Q67040-S4640
Page 1
jmax
j ma x
1 )
Symbol
I
I
E
E
I
V
V
P
T
dv/dt
D
D p uls
AR
AS
AR
GS
GS
tot
j ,
T
st g
Marking
24N60C3
V
DS
R
-55... +150
DS(on)
@ T
I
D
Value
24.3
15.4
72.9
24.3
±20
± 30
780
240
1
15
jmax
SPW24N60C3
PG-TO247
2008-02-11
0.16
24.3
650
V/ns
Unit
A
mJ
A
V
W
°C
V
A

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SPW24N60C3 Summary of contents

Page 1

... Please note the new package dimensions arccording to PCN 2009-134-A Ordering Code Marking Q67040-S4640 24N60C3 Symbol uls limited jmax limited tot dv/dt Page 1 SPW24N60C3 @ T 650 jmax Ω R 0.16 DS(on PG-TO247 Value Unit A 24.3 15.4 72.9 780 ±20 ± 30 240 W °C -55... +150 15 V/ns ...

Page 2

... V DSS DS GS =25° =150° =20, V =0V V GSS GS DS =10V, I =15.4A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPW24N60C3 Value Unit 50 V/ns Values Unit min. typ. max 0.52 K 260 °C Values Unit min. typ. max. 600 - - V - 700 - 2 ...

Page 3

... D G =380V, V =0/10V =3.3 Ω I =24.3A d(off =480, I =24. =480V, I =24.3A 10V =480V, I =24. (plateau) DD =400V, V < <T . peak BR, DSS j j,max Page 3 SPW24N60C3 Values min. typ. max 3000 - - 1000 - - 141 - - 224 - - 140 - - 12 45 104.9 135 - * while V is rising from 0 to 80% V oss ...

Page 4

... rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n T Page 4 SPW24N60C3 Values min. typ. max 600 = 1400 Value typ. 0.0004439 0.001662 0.002268 0.006183 0.014 0.104 E xternal H eatsink case am b 2008-02-11 Unit ...

Page 5

... Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter: t 100 0.01 20 single pulse Page 5 SPW24N60C3 ) DS =25° 0.001 0. 0 =25° µ Vgs = 20V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 2008-02- ...

Page 6

... Typ. drain-source on resistance R DS(on) parameter Ω 0.8 0.7 0.6 0.5 0.4 0.3 0 Typ. transfer characteristics parameter 100 100 °C 180 T j Page 6 SPW24N60C3 = =150° Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 20V ≥ DS(on)max = 10 µ 25° 150° ...

Page 7

... Forward characteristics of body diode parameter 100 120 140 nC 170 Q Gate 12 Avalanche energy par 0.9 mJ 0.7 0.6 0.5 Tj (START) =25°C 0.4 0.3 0.2 0 µ Page 7 SPW24N60C3 ) µ SPW24N60C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1 100 °C 2008-02- 150 T j ...

Page 8

... Please note the new package dimensions arccording to PCN 2009-134-A 14 Avalanche power losses parameter: E 1000 W 600 400 200 0 3 100 °C 180 Typ oss DS 28 Ciss µJ Coss Crss 400 V 600 Page 8 SPW24N60C3 =1mJ stored energy oss ) 100 200 300 400 V V 2008-02- 600 DS ...

Page 9

... Definition of diodes switching characteristics Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A Page 9 SPW24N60C3 2008-02-11 ...

Page 10

G Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 11

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

Page 12

New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...

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