IRFBF20LPBF Vishay, IRFBF20LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFBF20LPBF
• Description: MOSFET N-CH 900V 1.7A TO-262
• Manufacturer: Vishay

Specifications of IRFBF20LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 1.7A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBF20LPBF

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
www.vishay.com
2
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
Maximum Junction-to-Case
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
C
t
t
I
I
R
R
V
C
C
Q
GS(th)
DS(on)
Q
d(on)
d(off)
GSS
DSS
g
Q
DS
t
DS
oss
t
thJA
thJC
rss
iss
gd
fs
gs
r
f
g
/T
J
V
V
GS
GS
V
R
DS
g
Reference to 25 °C, I
= 10 V
= 10 V
= 18 , V
= 720 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
TEST CONDITIONS
DS
DS
DS
GS
-
-
= 450 V, I
= 900 V, V
= V
= 50 V, I
= 0 V, I
V
V
GS
V
GS
DS
GS
GS
I
GS
D
= ± 20 V
= 10 V, see fig. 10
, I
= 25 V,
= 1.7 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 μA
D
= 250 μA
I
GS
= 1.0 A
D
= 1.7 A,
= 1.0 A
D
= 0 V
J
= 1 mA
DS
= 125 °C
b
= 360 V,
b
MAX.
b
b
2.3
40
MIN.
900
2.0
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2433-Rev. A, 25-Oct-10
Document Number: 91121
TYP.
490
1.1
8.0
55
18
21
56
32
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
100
500
8.0
4.7
4.0
38
21
-
-
-
-
-
-
-
-
-
-
mV/°C
UNIT
nA
μA
pF
nC
ns

V
V
S