IRFBF20LPBF Vishay, IRFBF20LPBF Datasheet - Page 3

• Manufacturer Part Number: IRFBF20LPBF
• Description: MOSFET N-CH 900V 1.7A TO-262
• Manufacturer: Vishay

Specifications of IRFBF20LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 1.7A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBF20LPBF

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFBF20/SiHFBF20 data and test conditions.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91121
S10-2433-Rev. A, 25-Oct-10
SPECIFICATIONS (T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Fig. 1 - Typical Output Characteristics
J
= 25 °C, unless otherwise noted)
a
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
SYMBOL
V
I
Q
t
SM
I
t
SD
on
S
rr
rr
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
= 1.7 A, dI/dt = 100 A/μs
S
= 1.7 A, V
Fig. 2 - Typical Output Characteristics
GS
G
= 0 V
b
D
S
b
MIN.
-
-
-
-
-
Vishay Siliconix
TYP.
0.85
350
-
-
-
www.vishay.com
MAX.
530
1.7
6.8
1.5
1.3
S
and L
D
UNIT
)
μC
ns
A
V
3