FDP19N40 Fairchild Semiconductor, FDP19N40 Datasheet - Page 3

• Manufacturer Part Number: FDP19N40
• Description: MOSFET N-CH 400V 19A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP19N40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 2115pF @ 25V
• Power - Max: 215W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 215000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP19N40 / FDPF19N40 Rev. A
Typical Performance Characteristics
3500
3000
2500
2000
1500
1000
0.40
0.35
0.30
0.25
0.20
0.15
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
0.1
500
Figure 1. On-Region Characteristics
40
10
1
0.03
0
0.1
0
V
GS
=
10.0V
15.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
0.1
V
Drain Current and Gate Voltage
V
10
DS
DS
,Drain-Source Voltage[V]
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
20
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
= 10V
*Notes:
1. 250
2. T
30
1
*Note: T
C
C
C
C
iss
oss
rss
V
= 25
μ
GS
s Pulse Test
(
C ds = shorted
= 20V
*Note:
o
C
40
1. V
2. f = 1MHz
J
10
= 25
GS
= 0V
o
C
)
10
50
30
3
50
10
80
10
10
Figure 2. Transfer Characteristics
1
Figure 4. Body Diode Forward Voltage
1
8
6
4
2
0
Figure 6. Gate Charge Characteristics
0.2
4
0
V
5
SD
, Body Diode Forward Voltage [V]
V
Q
5
Variation vs. Source Current
and Temperature
GS
g
10
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
150
o
C
0.6
V
V
V
150
15
DS
DS
DS
o
= 100V
= 200V
= 320V
C
6
*Notes:
25
20
1. V
2. 250
o
*Notes:
1. V
2. 250
C
-55
DS
*Note: I
o
GS
μ
C
25
= 20V
s Pulse Test
25
μ
= 0V
s Pulse Test
7
o
C
1.0
D
= 19A
30
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35
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