FDP19N40 Fairchild Semiconductor, FDP19N40 Datasheet - Page 4

MOSFET N-CH 400V 19A TO-220

FDP19N40

Manufacturer Part Number
FDP19N40
Description
MOSFET N-CH 400V 19A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP19N40

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
2115pF @ 25V
Power - Max
215W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
19 A
Power Dissipation
215000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP19N40
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDP19N40
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP19N40 / FDPF19N40 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
200
100
1.2
1.1
1.0
0.9
0.8
0.1
10
-75
1
1
Operation in This Area
is Limited by R
-25
vs. Temperature
T
- FDP19N40
J
V
, Junction Temperature
DS
, Drain-Source Voltage [V]
0.003
DS(on)
10
0.01
25
0.1
1
10
Figure 11. Transient Thermal Response Curve - FDP19N40
0.01
-5
0.5
0.1
0.05
0.02
Single pulse
0.2
*Notes:
75
1. T
2. T
3. Single Pulse
DC
10ms
C
J
100
1ms
= 150
= 25
*Notes:
10
[
1. V
2. I
100
o
-4
125
C
o
D
C
o
μ
GS
]
C
= 250
s
= 0V
10
μ
A
μ
Rectangular Pulse Duration [sec]
175
s
10
800
-3
(Continued)
10
-2
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
8
4
0
-75
25
10
*Notes:
-1
P
1. Z
2. Duty Factor, D= t
3. T
DM
-25
T
50
θ
JM
T
J
JC
, Junction Temperature
C
vs. Temperature
, Case Temperature
(t) = 0.6
- T
C
t
1
= P
10
t
2
25
75
o
DM
0
C/W Max.
* Z
1
θ
/t
JC
2
(t)
75
100
10
1
[
o
*Notes:
C
[
1. V
2. I
]
o
125
C
125
D
]
GS
= 9.5A
= 10V
www.fairchildsemi.com
175
150

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