FDA18N50 Fairchild Semiconductor, FDA18N50 Datasheet - Page 3

• Manufacturer Part Number: FDA18N50
• Description: MOSFET N-CH 500V 19A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA18N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 265 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2860pF @ 25V
• Power - Max: 239W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.265 Ohms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 239 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA18N50 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
5000
4000
3000
2000
1000
10
0.6
0.5
0.4
0.3
0.2
0.1
10
10
10
-1
2
1
0
10
0
0
10
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
5
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
C
15
oss
iss
rss
20
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
25
I
D
10
10
, Drain Current [A]
0
0
30
35
V
GS
40
= 10V
45
C
C
C
iss
oss
rss
= C
= C
= C
50
gs
10
gd
ds
* Note : T
+ C
10
+ C
1
* Notes :
55
1. 250
2. T
1
gd
V
gd
(C
GS
C
* Note :
ds
= 25
J
60
= 20V
µ
1. V
2. f = 1 MHz
= 25
= shorted)
s Pulse Test
o
GS
C
o
C
65
= 0 V
70
3
10
10
10
10
10
10
12
10
2
1
0
2
1
0
0.2
8
6
4
2
0
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
Variation vs. Source Current
150
0.6
25
4
o
10
C
25
o
C
150
o
0.8
C
V
V
o
GS
SD
Q
C
and Temperatue
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
1.0
, Total Gate Charge [nC]
V
6
DS
20
V
1.2
DS
= 400V
V
= 250V
DS
= 100V
1.4
-55
o
C
8
1.6
30
1.8
* Notes :
* Notes :
1. V
2. 250
* Note : I
1. V
2. 250
2.0
10
GS
DS
40
µ
= 0V
µ
= 40V
s Pulse Test
s Pulse Test
D
2.2
www.fairchildsemi.com
= 18A
2.4
12
50