FDA18N50 Fairchild Semiconductor, FDA18N50 Datasheet - Page 4

• Manufacturer Part Number: FDA18N50
• Description: MOSFET N-CH 500V 19A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA18N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 265 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2860pF @ 25V
• Power - Max: 239W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.265 Ohms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 239 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA18N50 Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
Operation in This Area
is Limited by R
vs. Temperature
-50
V
DS(on)
T
DS
J
, Drain-Source Voltage [V]
, Junction Temperature [
10
0
1
1 0
1 0
1 0
Figure 11. Transient Thermal Response Curve
-1
-2
1 0
0
-5
50
D = 0 .5
0 .0 2
0 .0 5
0 .0 1
0 .1
0 .2
100
1 0
* Notes :
100 ms
10
o
DC
1. T
2. T
3. Single Pulse
C]
-4
2
10 ms
s in g le p u ls e
* Notes :
C
J
= 25
= 150
1. V
2. I
t
1 ms
1
D
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
GS
= 250
o
150
C
o
= 0 V
C
100
µ
A
10
µ
s
1 0
µ
s
-3
200
(Continued)
4
1 0
-2
20
15
10
Figure 10. Maximum Drain Current
5
0
Figure 8. On-Resistance Variation
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
1 0
* N o te s :
-1
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
DM
θ
J M
J C
-50
50
( t) = 0 .5 2
- T
C
= P
t
1
T
1 0
T
vs. Case Temperature
t
vs. Temperature
C
2
D M
J
, Case Temperature [
, Junction Temperature [
0
o
* Z
0
C /W M a x .
75
1
θ
/t
J C
2
( t)
50
1 0
1
100
o
100
C]
o
C]
125
* Notes :
1. V
2. I
150
D
GS
= 9.5 A
www.fairchildsemi.com
= 10 V
150
200