IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet - Page 5

• Manufacturer Part Number: IRF9Z30PBF
• Description: MOSFET P-CH 50V 18A TO-220AB
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRF9Z30PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 93mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 64 ns
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z30PBF

Document Number: 91092
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91092_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
16
12
8
4
0
91092_11
25
10
0.1
10
-2
1
50
10
T
-5
0.05
0.02
0.01
D = 0.5
0.2
0.1
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
This datasheet is subject to change without notice.
Single Pulse
(Thermal Response)
150
10
175
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 10a - Switching Time Test Circuit
10 %
90 %
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
V
IRF9Z34, SiHF9Z34
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
1
j
= P
D.U.T.
P
DM
www.vishay.com/doc?91000
DM
Vishay Siliconix
R
x Z
D
t
d(off)
t
1
1
thJC
/t
2
t
+ T
t
2
f
-
+
www.vishay.com
C
10
V
DD
5