IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet - Page 5
![MOSFET P-CH 50V 18A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9Z30PBF
Manufacturer Part Number
IRF9Z30PBF
Description
MOSFET P-CH 50V 18A TO-220AB
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRF9Z30PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 9.3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-18A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
93mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fall Time
64 ns
Rise Time
110 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9Z30PBF
Document Number: 91092
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91092_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
16
12
8
4
0
91092_11
25
10
0.1
10
-2
1
50
10
T
-5
0.05
0.02
0.01
D = 0.5
0.2
0.1
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
This datasheet is subject to change without notice.
Single Pulse
(Thermal Response)
150
10
175
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 10a - Switching Time Test Circuit
10 %
90 %
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
V
IRF9Z34, SiHF9Z34
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
1
j
= P
D.U.T.
P
DM
www.vishay.com/doc?91000
DM
Vishay Siliconix
R
x Z
D
t
d(off)
t
1
1
thJC
/t
2
t
+ T
t
2
f
-
+
www.vishay.com
C
10
V
DD
5