IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet
IRF9Z30PBF
Specifications of IRF9Z30PBF
Related parts for IRF9Z30PBF
IRF9Z30PBF Summary of contents
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... Ease of Paralleling Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation D levels to approximately 50 W ...
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... IRF9Z34, SiHF9Z34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... C 2.5 2.0 1.5 - 4.5 V 1.0 0.5 20 µs Pulse Width T = 175 ° 91092_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF9Z34, SiHF9Z34 Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
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... IRF9Z34, SiHF9Z34 Vishay Siliconix 2000 MHz iss rss gd 1600 oss ds 1200 800 400 Drain-to-Source Voltage ( 91092_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91092_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... Fig. 10a - Switching Time Test Circuit 150 175 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF9Z34, SiHF9Z34 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) d(off) ...
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... IRF9Z34, SiHF9Z34 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91092_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V for logic level and - 3 V drive device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...