IRFL210 Vishay, IRFL210 Datasheet - Page 3

• Manufacturer Part Number: IRFL210
• Description: MOSFET N-CH 200V 960MA SOT223
• Manufacturer: Vishay

Specifications of IRFL210

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 580mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 960mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.96 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL210

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91193
S-81377-Rev. A, 30-Jun-08
SPECIFICATIONS T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
91193_01
91193_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
-1
-1
0
1
0
10
10
Top
Bottom
-1
-1
Top
Bottom
V
V
DS ,
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
V
15 V
10 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
J
a
0
= 25 °C, unless otherwise noted
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
10
=
10
SYMBOL
25 °C
150 °C
1
1
V
I
Q
t
SM
I
t
on
C
SD
S
rr
C
rr
= 150 °C
= 25 °C
4.5 V
4.5 V
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
91193_04
= 3.3 A, dI/dt = 100 A/µs
91193_03
S
= 0.96 A, V
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
- 60 - 40 - 20 0
0
-2
-1
4
I
V
D
Fig. 3 - Typical Transfer Characteristics
GS
GS
= 3.3 A
150
G
= 10 V
= 0 V
°
V
5
C
GS ,
T
25
J ,
b
D
S
Gate-to-Source Voltage (V)
Junction Temperature (°C)
°
C
IRFL210, SiHFL210
b
6
20 40 60 80 100 120 140 160
MIN.
-
-
-
-
-
7
Vishay Siliconix
20 µs Pulse Width
V
TYP.
8
0.60
150
DS
-
-
-
=
50 V
9
www.vishay.com
MAX.
S
0.96
310
7.7
2.0
1.4
and L
10
D
UNIT
)
µC
ns
A
V
3