IRFL210 Vishay, IRFL210 Datasheet - Page 4

• Manufacturer Part Number: IRFL210
• Description: MOSFET N-CH 200V 960MA SOT223
• Manufacturer: Vishay

Specifications of IRFL210

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 580mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 960mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.96 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL210

IRFL210, SiHFL210
Vishay Siliconix
www.vishay.com
4
91193_05
91193_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
300
250
200
150
100
50
20
16
12
0
8
4
0
10
0
0
I
D
= 3.3 A
V
DS ,
Q
2
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
= 40 V
4
V
C
C
C
V
GS
iss
rss
oss
DS
= 0 V, f = 1 MHz
= C
= C
= C
= 100 V
10
C
C
C
gs
gd
ds
iss
oss
rss
6
1
+ C
V
+ C
DS
gd
gd
= 160 V
, C
For test circuit
see figure 13
ds
8
Shorted
10
91193_08
91193_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
10
2
5
2
5
2
1
5
2
-1
0
1
Fig. 8 - Maximum Safe Operating Area
0.4
1
T
T
Single Pulse
C
J
150
= 150 °C
= 25 °C
2
°
V
C
V
DS
SD
Operation in this area limited
5
, Drain-to-Source Voltage (V)
0.8
, Source-to-Drain Voltage (V)
25
10
°
C
by R
2
1.2
DS(on)
5
S-81377-Rev. A, 30-Jun-08
Document Number: 91193
10
2
1.6
2
100
10
1
V
ms
GS
ms
µs
5
= 0 V
10
2.0
3