PHB101NQ04T,118 NXP Semiconductors, PHB101NQ04T,118 Datasheet

MOSFET N-CH 40V 75A D2PAK

PHB101NQ04T,118

Manufacturer Part Number
PHB101NQ04T,118
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHB101NQ04T,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
36.6nC @ 10V
Input Capacitance (ciss) @ Vds
2020pF @ 25V
Power - Max
157W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2182-2
934058559118
PHB101NQ04T /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
General industrial applications
PHB101NQ04T
N-channel TrenchMOS standard level FET
Rev. 02 — 10 March 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
see
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 11
Figure 10
= 25 °C; V
= 25 °C; see
= 32 V; T
= 10 V; I
= 10 V; I
1; see
j
D
D
≤ 175 °C
j
= 25 °C;
GS
= 25 A;
= 25 A;
Figure
Figure 2
= 10 V;
Figure 3
9;
Suitable for standard level gate drive
sources
Motors, lamps and solenoids
Uninterruptible power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
12.6
6.6
Max
40
75
157
-
8
Unit
V
A
W
nC
mΩ

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PHB101NQ04T,118 Summary of contents

Page 1

PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 02 — 10 March 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain [ not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description PHB101NQ04T D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) 4 ...

Page 3

... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of mounting base temperature (A) Limit R DSon = Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHB101NQ04T_2 Product data sheet N-channel TrenchMOS standard level FET 120 03aq90 ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 1 δ = 0.5 Z th(j-mb) (K/W) 0.2 0.1 0.05 0. single pulse - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

Page 6

... NXP Semiconductors 240 ° (A) 160 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 5 V GS(th) (V) 4 max 3 typ 2 min 1 0 − Fig 7. Gate-source threshold voltage as a function of junction temperature PHB101NQ04T_2 Product data sheet N-channel TrenchMOS standard level FET ...

Page 7

... NXP Semiconductors ° DSon (mΩ Fig 9. Drain-source on-state resistance as a function of drain current; typical values ( ° Fig 11. Gate-source voltage as a function of gate charge; typical values PHB101NQ04T_2 Product data sheet 2 03aq94 1 0.5 0 -60 160 240 I D (A) Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature ...

Page 8

... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHB101NQ04T_2 Product data sheet ( 175 ° ° 0.3 0.6 0.9 Rev. 02 — 10 March 2009 PHB101NQ04T N-channel TrenchMOS standard level FET 03aq96 1 (V) © NXP B.V. 2009. All rights reserved ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 14. Package outline SOT404 (D2PAK) PHB101NQ04T_2 Product data sheet 2.5 ...

Page 10

... PHB101NQ04T_2 20090310 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHB101NQ04T separated from data sheet PHP_PHB101NQ04T-01. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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