APT47N60BC3G Microsemi Power Products Group, APT47N60BC3G Datasheet
APT47N60BC3G
Manufacturer Part Number
APT47N60BC3G
Description
MOSFET N-CH 600V 47A TO-247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT47N60BC3G.pdf
(5 pages)
Specifications of APT47N60BC3G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
3.9V @ 2.7mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
7015pF @ 25V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT47N60BC3GMI
APT47N60BC3GMI
APT47N60BC3GMI
"COOLMOS
mark of Infineon Technologies AG"
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
• Ultra low R
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
• Avalanche Energy Rated
• TO-247 or Surface Mount D
C
Symbol
Symbol
T
Power Semiconductors
R
V
BV
V
V
J
V
dv
E
E
I
I
DS(on)
,T
GS(th)
O
I
I
P
DSS
GSS
GSM
T
DSS
DM
I
AR
GS
D
AR
AS
/
DSS
D
STG
L
dt
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
O
LMOS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
™
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
DS
(
ON
)
Super Junction MOSFET
1
g
3
PAK Package
DS
C
APT Website - http://www.advancedpower.com
= V
DS
C
= 25°C
7
7
= 25°C
4
= 480V, I
GS
GS
2
, I
DS
DS
= ±20V, V
GS
D
(V
= 600V, V
= 600V, V
= 2.7mA)
= 0V, I
GS
D
= 47A, T
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V)
= 0V, T
D
J
= 30A)
= 125°C)
All Ratings: T
J
= 150°C)
APT47N60BC3
APT47N60SC3
C
600V 47A 0.070
= 25°C unless otherwise specified.
2.10
MIN
600
APT47N60BC3_SC3
TO-247
-55 to 150
1800
3.33
0.06
TYP
±20
±30
600
141
417
260
0.5
47
50
20
3
1
±100
MAX
0.07
250
3.9
25
D
3
G
PAK
Amps
Watts
Amps
Ohms
UNIT
W/°C
Volts
Volts
UNIT
Volts
Volts
V/ns
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S
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APT47N60BC3G Summary of contents
Page 1
Super Junction MOSFET LMOS Power Semiconductors • Ultra low • Low Miller Capacitance • Ultra Low Gate Charge • Avalanche Energy Rated • TO-247 or Surface Mount D MAXIMUM RATINGS ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
RC MODEL Junction temp. (°C) 0.0136 0.0289 Power (watts) 0.0988 0.158 Case temperature (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 V DS > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 47A ...
Page 5
Typical Performance Curves 10% t d(on) t Collector Current r 90% 10 Collector Voltage Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 D.U.T. Figure 20, Inductive Switching Test ...