APT47N60BC3G Microsemi Power Products Group, APT47N60BC3G Datasheet - Page 3

• Manufacturer Part Number: APT47N60BC3G
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT47N60BC3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 3.9V @ 2.7mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7015pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT47N60BC3GMI; APT47N60BC3GMI

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
Case temperature (°C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
2.5
2.0
1.5
1.0
0.5
80
60
40
20
50
40
30
20
10
0
0
3
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V DS > I D (ON) x R DS (ON)MAX.
V
Junction
temp. (°C)
FIGURE 4, TRANSFER CHARACTERISTICS
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
GS
D
T
(watts)
Power
1
J
= 47A
T
, JUNCTION TEMPERATURE (°C)
= 10V
50
C
, CASE TEMPERATURE (°C)
0
2
T J = +125°C
25
75
T J = +25°C
3
T J = -55°C
RC MODEL
50
4
100
0.0136
0.0289
0.0988
0.158
75
5
100 125 150
125
6
0.00308
0.00145
0.00948
0.231
150
7
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
180
160
140
120
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50 -25
0
0
V
DS
FIGURE 5, R
V GS =15 & 10V
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
GS
T
NORMALIZED TO
I
J
D
5
T
, JUNCTION TEMPERATURE (°C)
= 10V @ 23.5A
, DRAIN CURRENT (AMPERES)
20
C
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
30
DS
25
25
(ON) vs DRAIN CURRENT
40
15
50
50
V GS =20V
50
75
75
6.5V
20
60
6V
100 125 150
100 125 150
APT47N60BC3_SC3
5.5V
70
25
5V
80
4.5V
4V
30
90