IXTP08N50D2 IXYS, IXTP08N50D2 Datasheet - Page 3

• Manufacturer Part Number: IXTP08N50D2
• Description: MOSFET N-CH 500V 800MA TO220AB
• Manufacturer: IXYS

Specifications of IXTP08N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 4.6 Ohm @ 400mA, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 800mA
• Gate Charge (qg) @ Vgs: 12.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 312pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 500
• Id(on), Min, (a): 0.8
• Rds(on), Max, (?): 4.6
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 312
• Crss, Typ, (pf): 11
• Qg, Typ, (nc): 12.7
• Pd, (w): 60
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

© 2009 IXYS CORPORATION, All Rights Reserved
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0
0
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
1
100
Fig. 5. Drain Current @ T
1.0
2
200
V
V
V
DS
DS
DS
- Volts
- Volts
V
- Volts
GS
1.5
300
3
= 5V
3V
2V
1V
V
GS
-2V
-1V
= 5V
0V
1V
2V
2.0
J
400
4
= 100ºC
-1V
-2V
-3V
0V
J
J
= 125ºC
= 25ºC
V
GS
2.5
500
5
= -2.75V
-3.00V
-3.25V
-3.50V
-3.75V
-4.00V
3.0
600
6
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-4.2
0
0
-4.0
Fig. 6. Dynamic Resistance vs. Gate Voltage
100
Fig. 2. Extended Output Characteristics
5
IXTY08N50D2 IXTA08N50D2
-3.8
Fig. 4. Drain Current @ T
T
J
-3.6
200
10
= 100ºC
V
V
@ T
DS
DS
-3.4
V
GS
- Volts
- Volts
J
300
15
= 25ºC
- Volts
T
-3.2
J
V
= 25ºC
GS
= 5V
-2V
-1V
3V
2V
1V
0V
IXTP08N50D2
-3.0
400
20
J
= 25ºC
∆
V
DS
-2.8
= 350V - 100V
V
GS
500
25
= - 2.50V
- 2.25V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
-2.6
-2.4
600
30