IXTP08N50D2 IXYS, IXTP08N50D2 Datasheet - Page 4
IXTP08N50D2
Manufacturer Part Number
IXTP08N50D2
Description
MOSFET N-CH 500V 800MA TO220AB
Manufacturer
IXYS
Datasheet
1.IXTP08N50D2.pdf
(5 pages)
Specifications of IXTP08N50D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
4.6 Ohm @ 400mA, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
800mA
Gate Charge (qg) @ Vgs
12.7nC @ 5V
Input Capacitance (ciss) @ Vds
312pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220AB
Vds, Max, (v)
500
Id(on), Min, (a)
0.8
Rds(on), Max, (?)
4.6
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
312
Crss, Typ, (pf)
11
Qg, Typ, (nc)
12.7
Pd, (w)
60
Rthjc, Max, (ºc/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-3.5
-50
-50
Fig. 7. Normalized R
V
I
V
D
GS
DS
-3.0
= 0.4A
= 0V
-25
= 30V
-25
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
-2.0
vs. Junction Temperature
T
T
Fig. 9. Input Admittance
J
J
- Degrees Centigrade
- Degrees Centigrade
25
25
-1.5
V
T
DS(on)
J
GS
= 125ºC
- 40ºC
- Volts
25ºC
-1.0
50
50
vs. Junction Temperature
-0.5
V
75
75
GS(off)
0.0
@ V
BV
100
100
DSX
DS
0.5
= 25V
@ V
GS
125
125
= - 5V
1.0
150
1.5
150
3.0
2.5
2.0
1.5
1.0
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.0
0.0
0.3
T
J
V
= 125ºC
T
V
DS
J
GS
= 25ºC
= 30V
= -10V
Fig. 8. R
0.4
IXTY08N50D2
0.5
0.4
Fig. 12. Forward Voltage Drop of
Fig. 10. Transconductance
DS(on)
0.8
1.0
0.5
vs. Drain Current
Normalized to I
Intrinsic Diode
I
I
D
D
T
V
J
- Amperes
- Amperes
SD
= 125ºC
- Volts
1.2
1.5
0.6
IXTA08N50D2
IXTP08N50D2
D
1.6
2.0
0.7
= 0.4A Value
V
GS
= 0V
5V
T
2.5
2.0
0.8
J
- - - -
T
= - 40ºC
J
125ºC
= 25ºC
25ºC
3.0
2.4
0.9