IXTP88N085T IXYS, IXTP88N085T Datasheet - Page 4

MOSFET N-CH 85V 88A TO-220

IXTP88N085T

Manufacturer Part Number
IXTP88N085T
Description
MOSFET N-CH 85V 88A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTP88N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
3140pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
88 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.0110
Ciss, Typ, (pf)
3140
Qg, Typ, (nc)
69
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
160
140
120
100
200
180
160
140
120
100
100
80
60
40
20
80
60
40
20
10
0
0
0.4
3
0
f = 1 MHz
0.5
3.5
5
Fig. 9. Forward Voltage Drop of
0.6
T
J
4
10
= 150ºC
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.7
Intrinsic Diode
4.5
15
V
V
0.8
V
GS
SD
DS
- Volts
- Volts
- Volts
0.9
20
5
T
J
C iss
C oss
C rss
= 25ºC
T
1
5.5
J
25
= -40ºC
150ºC
25ºC
1.1
30
6
1.2
6.5
35
1.3
1.4
40
7
1.00
0.10
0.01
90
80
70
60
50
40
30
20
10
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
5
D
G
DS
= 25A
= 10mA
20
10
= 43V
Fig. 12. Maximum Transient Thermal
0.001
15
Fig. 8. Transconductance
40
20
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
25
- NanoCoulombs
I
60
D
0.01
- Amperes
Impedance
30
80
35
40
T
0.1
J
IXTP88N085T
IXTA88N085T
100
= - 40ºC
45
150ºC
25ºC
50
120
55
1
60
140
65
160
10
70

Related parts for IXTP88N085T