IXTP88N085T IXYS, IXTP88N085T Datasheet - Page 5

• Manufacturer Part Number: IXTP88N085T
• Description: MOSFET N-CH 85V 88A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP88N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 3140pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 88 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 88
• Rds(on), Max, Tj=25°c, (?): 0.0110
• Ciss, Typ, (pf): 3140
• Qg, Typ, (nc): 69
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 230
• Rthjc, Max, (k/w): 0.65
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
120
110
100
33
32
31
30
29
28
27
90
80
70
60
50
40
30
20
10
70
65
60
55
50
45
40
35
30
25
20
15
20
25
5
7
Switching Times vs. Gate Resistance
22
t
T
V
Switching Times vs. Drain Current
35
r
J
DS
I
= 125ºC, V
Rise Time vs. Junction Temperature
9
D
= 44V
= 20A
24
Fig. 17. Resistive Turn-off
11 13 15 17 19 21 23 25 27 29 31 33
Fig. 15. Resistive Turn-on
45
Fig. 13. Resistive Turn-on
t
26
d(on)
GS
T
I
55
T
T
J
D
I
J
- - - -
R
J
= 125ºC
D
= 10V
28
= 25ºC
- Amperes
- Degrees Centigrade
G
= 40A
- Ohms
65
30
75
I
t
R
V
32
D
f
G
DS
= 40A, 20A
= 5 Ω , V
= 44V
85
34
t
d(off)
GS
36
95
= 10V
- - - -
R
V
V
G
GS
DS
38
105
= 5 Ω
= 44V
= 10V
40
115
58
54
50
46
42
38
34
41
39
37
35
33
31
29
27
25
23
21
19
125
130
120
110
100
90
80
70
60
50
40
30
20
33
32
31
30
29
28
27
70
65
60
55
50
45
40
35
30
25
20
15
25
5
20
Switching Times vs. Junction Temperature
t
T
V
Switching Times vs. Gate Resistance
7
f
J
DS
35
= 125ºC, V
R
V
V
22
G
GS
DS
= 44V
9
= 5 Ω
= 10V
= 44V
45
11 13 15 17 19 21 23 25 27 29 31 33
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
24
T
t
Rise Time vs. Drain Current
d(off)
J
Fig. 14. Resistive Turn-on
- Degrees Centigrade
55
GS
- - - -
26
= 10V
R
G
65
I
- Ohms
D
28
- Amperes
75
I
D
30
85
= 20A
IXYS REF: T_88N085T (3V) 9-15-06-A.xls
t
R
V
f
G
DS
I
I
D
D
= 5 Ω , V
32
T
T
IXTP88N085T
IXTA88N085T
= 44V
95
= 40A
= 20A
I
J
J
D
= 25ºC
= 125ºC
= 40A
t
105
d(off)
34
GS
- - - -
= 10V
115
36
125
38
220
200
180
160
140
120
100
80
60
40
20
0
52
49
46
43
40
37
34
40