IRFB5615PBF International Rectifier, IRFB5615PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB5615PBF
• Description: MOSFET N-CH 150V 35A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRFB5615PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 144 W
• Mounting Style: Through Hole
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
Notes:
BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
R
t
t
t
t
C
C
C
C
L
L
E
I
E
I
I
V
t
Q
Electrical Characteristics @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
fs
D
S
GS(th)
AS
AR
SD
DS(on)
G(int)
iss
oss
rss
oss
g
Q
Q
Q
Q
sw
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
@ T
Starting T
GS(th)
DSS
gs1
gs2
gd
godr
DSS
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
J
= 25°C, L = 0.51mH, R
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
G
= 25Ω, I
gs2
Ãg
+ Q
J
= 25°C (unless otherwise specified)
AS
gd
)
= 21A.
g
Min. Typ. Max. Units
Min. Typ. Max. Units
150
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
35
„
…
avalanche information
R
1750
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
0.18
23.1
17.2
13.1
–––
–––
–––
–––
–––
–––
–––
155
175
–––
–––
–––
312
-13
6.4
2.2
9.0
8.9
2.7
8.9
4.5
7.5
32
26
11
40
80
θ
is measured at
-100
Typ.
See Fig. 14, 15, 17a, 17b
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
120
468
5.0
5.0
1.3
39
20
40
35
mV/°C
V/°C
mΩ
nC
nH
nC
µA
nA
pF
ns
ns
T
V
V
S
Ω
A
V
J
of approximately 90°C.
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 19
V
I
R
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
G
= 21A
= 21A
= 25°C, I
= 25°C, I
= 2.4Ω
= V
= 150V, V
= 150V, V
= 50V, I
=75V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 75V, V
= 0V
= 0V, V
GS
Max.
109
, I
D
Conditions
Conditions
S
F
D
DS
D
D
= 250µA
GS
= 21A, V
= 21A, V
= 100µA
= 21A
= 21A
GS
GS
= 0V to 120V
= 10V
e
= 0V
= 0V, T
See Fig.5
D
e
Ãe
GS
R
www.irf.com
= 1mA
=120V
J
= 0V
= 125°C
Units
G
mJ
mJ
A
e
S
D