IRFB5615PBF International Rectifier, IRFB5615PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB5615PBF
• Description: MOSFET N-CH 150V 35A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRFB5615PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 144 W
• Mounting Style: Through Hole
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
1000
Fig 9. Maximum Drain Current vs. Case Temperature
4
100
1.0
10
40
35
30
25
20
15
10
0.001
5
0
0.01
0.1
0.2
25
10
1E-006
1
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
D = 0.50
0.6
0.02
0.01
0.05
0.10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
75
0.8
100
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
T J = 25°C
1.0
125
1.2
V GS = 0V
150
1.4
t 1 , Rectangular Pulse Duration (sec)
0.0001
1.6
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
1
τ
2
0.001
R
τ
2
2
R
2
R
τ
1000
Fig 10. Threshold Voltage vs. Temperature
3
3
R
100
τ
0.1
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
3
10
1
-75 -50 -25
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1
τ
R
4
Fig 8. Maximum Safe Operating Area
τ
4
Tc = 25°C
Tj = 175°C
Single Pulse
R
4
4
τ
C
τ
V DS , Drain-to-Source Voltage (V)
0.01
Ri (°C/W) τi (sec)
I D = 100µA
I D = 250uA
ID = 1.0mA
ID = 1.0A
0.02324
0.26212
0.50102
0.25880
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J , Temperature ( °C )
0
10
10msec
DC
1msec
25 50 75 100 125 150 175
0.000008
0.000106
0.001115
0.005407
100µsec
100
0.1
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1000