STP2NK100Z STMicroelectronics, STP2NK100Z Datasheet - Page 15

• Manufacturer Part Number: STP2NK100Z
• Description: MOSFET N-CH 1000V 1.85A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.85A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 499pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.85A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 6.25ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 8.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7518-5; STP2NK100Z

STD2NK100Z - STP2NK100Z - STU2NK100Z
6
Revision history
Table 10.
18-Jun-2008
24-Oct-2007
Date
Document revision history
Revision
1
2
First release
– Inserted new package, mechanical data IPAK
– Document status promoted from preliminary data to
datasheet.
Changes
Revision history
15/16