STP2NK100Z STMicroelectronics, STP2NK100Z Datasheet - Page 3

• Manufacturer Part Number: STP2NK100Z
• Description: MOSFET N-CH 1000V 1.85A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.85A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 499pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.85A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 6.25ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 8.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7518-5; STP2NK100Z

STD2NK100Z - STP2NK100Z - STU2NK100Z
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
Table 4.
1. Pulse width limited by Tjmax
2. Starting Tj = 25°C, I
V
Symbol
Symbol
Symbol
R
R
dv/dt
R
E
ESD(G-S)
I
I
SD
DM
P
thj-case
AR
thj-amb
V
thj-pcb
AS
V
T
I
I
TOT
T
T
GS
DS
stg
D
D
l
j
(1)
≤ 1.85 A, di/dt ≤ 200 A/µs, V
(1)
(2)
(2)
Thermal resistance junction-case max
Thermal resistance junction-pcb minimum footprint
Thermal resistance junction-amb max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
G-S ESD (HBM C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche data
D
= I
AR
, V
DD
= 50V
Parameter
Parameter
DD
Parameter
C
= 25 °C
= 80% V
GS
= 0)
(BR)DSS
C
C
= 25 °C
= 100 °C
TO-220
62.5
--
-55 to 150
Value
Value
Value
1000
3000
± 30
1.85
1.16
0.56
1.79
1.85
300
170
IPAK
7.4
2.5
70
--
Electrical ratings
100
DPAK
50
W/°C
°C/W
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
°C
mJ
W
V
V
A
A
A
V
A
3/16