IRFB4310ZPBF International Rectifier, IRFB4310ZPBF Datasheet - Page 7

• Manufacturer Part Number: IRFB4310ZPBF
• Description: MOSFET N-CH 100V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4310ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6860pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 120 A
• Gate Charge, Total: 120 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 4.8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 127 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit

‚
+
-
R G
20K
20V
V
1K
V DS
GS
D.U.T
t p
≤ 0.1 %
≤ 1
Fig 21.
I AS
D.U.T
0.01 Ω
L
S
ƒ
+
-
•
•
•
•
DUT
SD
•
•
•
L
15V
DRIVER
-
„
G
+
-
+
-
V DD
+
VCC
A
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
90%
Fig 22b. Unclamped Inductive Waveforms
V
10%
V
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
DS
Fig 23b. Switching Time Waveforms
GS
I
Fig 24b. Gate Charge Waveform
AS
Id
for HEXFET
P.W.
SD
DS
Vgs
Waveform
Waveform
t
d(on)
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
t
r
Diode Recovery
Qgodr
®
Current
t p
Power MOSFETs
dv/dt
Forward Drop
di/dt
t
d(off)
Qgd
D =
Period
V
P.W.
t
(BR)DSS
f
Qgs2
Vgs(th)
Vds
Qgs1
V
V
I
SD
GS
DD
=10V
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