STW43NM60ND STMicroelectronics, STW43NM60ND Datasheet

MOSFET N-CH 600V 35A TO-247

STW43NM60ND

Manufacturer Part Number
STW43NM60ND
Description
MOSFET N-CH 600V 35A TO-247
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheets

Specifications of STW43NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 17.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
4300pF @ 50V
Power - Max
255W
Mounting Type
Through Hole
Package / Case
TO-247
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.075ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.088 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
35 A
Power Dissipation
255 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8461-5

Available stocks

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STW43NM60ND 43NM60ND
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Features
Application
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1.
February 2010
STW43NM60ND
The worldwide best R
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities.
Switching applications
Type
STW43NM60ND
Order code
Device summary
V
T
650 V
DSS
JMAX
@
DS(on)
< 0.088 Ω
*area amongst the
R
max
DS(on)
FDmesh™ Power MOSFET (with fast diode)
43NM60ND
Marking
N-channel 600 V, 0.075 Ω, 35 A TO-247
Doc ID 14402 Rev 3
35 A
I
D
Figure 1.
Package
TO-247
Internal schematic diagram
STW43NM60ND
TO-247
1
2
Packaging
3
Tube
www.st.com
1/12
12

Related parts for STW43NM60ND

STW43NM60ND Summary of contents

Page 1

... Order code STW43NM60ND February 2010 N-channel 600 V, 0.075 Ω TO-247 FDmesh™ Power MOSFET (with fast diode) R DS(on max < 0.088 Ω *area amongst the Figure 1. Marking 43NM60ND Doc ID 14402 Rev 3 STW43NM60ND TO-247 Internal schematic diagram Package Packaging TO-247 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 14402 Rev 3 STW43NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STW43NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT (2) dv/dt Peak diode recovery voltage slope T Storage temperature stg T Max. operating junction temperature j 1. Pulse width limited by safe operating area ≤ ...

Page 4

... Parameter Test conditions V = MHz 480 (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain DS Doc ID 14402 Rev 3 STW43NM60ND Min. Typ 600 GS = 250 µ 17.5 A 0.075 0.088 D Min. Typ 4300 - 250 480 V - 530 = 35 A, 145 1.7 oss Max. Unit ...

Page 5

... STW43NM60ND Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Figure 3. AM01508v1 10µs 100µs 1ms 10ms Figure 5. Figure 7. AM01511v1 R DS(on) (Ω) 0.085 T =25°C J 0.080 0.075 T =150°C J 0.070 0.065 0.060 I ( Doc ID 14402 Rev 3 STW43NM60ND Thermal impedance Transfer characteristics Static drain-source on resistance AM01512v1 I (A) D ...

Page 7

... STW43NM60ND Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.1 1.0 0.9 0.8 0.7 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 -50°C 0.8 0.7 0.6 0.5 0 Figure 11. Normalized on resistance vs AM01515v1 R DS(on) (norm) T (°C) 75 100 125 J Figure 13 ...

Page 8

... Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped inductive load test circuit Figure 19. Switching time waveform Doc ID 14402 Rev 3 STW43NM60ND ...

Page 9

... STW43NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Doc ID 14402 Rev 3 Package mechanical data ...

Page 10

... L1 L2 øP øR S 10/12 TO-247 mechanical data mm. Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 14402 Rev 3 STW43NM60ND Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 11

... STW43NM60ND 5 Revision history Table 9. Document revision history Date 06-Feb-2008 22-Jan-2009 16-Feb-2010 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Figure 13: Normalized B 3 corrected Doc ID 14402 Rev 3 Revision history Changes vs temperature has been VDSS 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 14402 Rev 3 STW43NM60ND ...

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