STW43NM60ND STMicroelectronics, STW43NM60ND Datasheet

MOSFET N-CH 600V 35A TO-247

STW43NM60ND

Manufacturer Part Number
STW43NM60ND
Description
MOSFET N-CH 600V 35A TO-247
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheets

Specifications of STW43NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 17.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
4300pF @ 50V
Power - Max
255W
Mounting Type
Through Hole
Package / Case
TO-247
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.075ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.088 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
35 A
Power Dissipation
255 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8461-5

Available stocks

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STW43NM60ND 43NM60ND
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Features
Application
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1.
February 2011
STW43NM60ND
The worldwide best R
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities.
Switching applications
Type
STW43NM60ND
Order code
Device summary
V
T
650 V
DSS
JMAX
@
DS(on)
< 0.088 Ω
*area amongst the
R
max
DS(on)
FDmesh™ Power MOSFET (with fast diode)
43NM60ND
Marking
N-channel 600 V, 0.075 Ω , 35 A TO-247
Doc ID 14402 Rev 4
35 A
I
D
Figure 1.
Package
TO-247
Internal schematic diagram
STW43NM60ND
TO-247
1
2
Packaging
3
Tube
www.st.com
1/13
13

Related parts for STW43NM60ND

STW43NM60ND Summary of contents

Page 1

... Order code STW43NM60ND February 2011 N-channel 600 V, 0.075 Ω TO-247 FDmesh™ Power MOSFET (with fast diode) R DS(on max < 0.088 Ω *area amongst the Figure 1. Marking 43NM60ND Doc ID 14402 Rev 4 STW43NM60ND TO-247 Internal schematic diagram Package Packaging TO-247 Tube 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 14402 Rev 4 STW43NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STW43NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT (2) dv/dt Peak diode recovery voltage slope T Storage temperature stg T Max. operating junction temperature j 1. Pulse width limited by safe operating area ≤ ...

Page 4

... Parameter Test conditions V = MHz 480 (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain DS Doc ID 14402 Rev 4 STW43NM60ND Min. Typ 600 GS = 250 µ 17.5 A 0.075 0.088 D Min. Typ 4300 - 250 480 V - 530 = 35 A, 145 1.7 oss Max. Unit ...

Page 5

... STW43NM60ND Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Figure 3. AM01508v1 10µs 100µs 1ms 10ms Figure 5. Figure 7. AM01511v1 R DS(on) (Ω) 0.085 T =25°C J 0.080 0.075 T =150°C J 0.070 0.065 0.060 I ( Doc ID 14402 Rev 4 STW43NM60ND Thermal impedance Transfer characteristics Static drain-source on resistance AM01512v1 I (A) D ...

Page 7

... STW43NM60ND Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.1 1.0 0.9 0.8 0.7 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 -50°C 0.8 0.7 0.6 0.5 0 Figure 11. Normalized on resistance vs AM01515v1 R DS(on) (norm) T (°C) 75 100 125 J Figure 13 ...

Page 8

... Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/13 Figure 15. Gate charge test circuit Figure 17. Unclamped inductive load test circuit Figure 19. Switching time waveform Doc ID 14402 Rev 4 STW43NM60ND ...

Page 9

... STW43NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Doc ID 14402 Rev 4 Package mechanical data ...

Page 10

... TO-247 mechanical data Dim ∅P ∅R S 10/13 mm Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 14402 Rev 4 STW43NM60ND Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 11

... STW43NM60ND Figure 20. TO-247 drawing Doc ID 14402 Rev 4 Package mechanical data 0075325_F 11/13 ...

Page 12

... Revision history Table 10. Document revision history Date 06-Feb-2008 22-Jan-2009 16-Feb-2010 14-Feb-2011 12/13 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Figure 13: Normalized B 3 corrected value in Table 5 DSS Doc ID 14402 Rev 4 STW43NM60ND Changes vs temperature has been VDSS has been corrected. ...

Page 13

... STW43NM60ND Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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