IXTK170P10P IXYS, IXTK170P10P Datasheet - Page 4

• Manufacturer Part Number: IXTK170P10P
• Description: MOSFET P-CH 100V 170A TO-264
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTK170P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 12600pF @ 25V
• Power - Max: 890W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -170
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 12600
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 176
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
-160
-140
-120
-100
-300
-270
-240
-210
-180
-150
-120
1,000
-80
-60
-40
-20
-90
-60
-30
100
0
0
-3.0
-0.5
0
f
-3.5
-1.0
= 1 MHz
-5
Fig. 9. Forward Voltage Drop of
-4.0
-1.5
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
-4.5
-2.0
J
Intrinsic Diode
-15
= 125ºC
V
V
V
GS
SD
DS
-5.0
-2.5
- Volts
-20
- Volts
- Volts
-5.5
-3.0
-25
T
T
J
J
= - 40ºC
= 25ºC
C iss
C oss
-6.0
-3.5
C rss
-30
125ºC
25ºC
-6.5
-4.0
-35
-7.0
-4.5
-40
-
1,000
-
100
100
-
-10
90
80
70
60
50
40
30
20
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
1
-
0
0
1
Fig. 12. Forward-Bias Safe Operating Area
20
V
I
I
T
T
Single Pulse
R
D
G
DS
J
C
-20
DS(on)
= - 85A
= -1mA
= 150ºC
= 25ºC
= - 50V
40
Limit
Fig. 8. Transconductance
-40
60
Fig. 10. Gate Charge
80
Q
-60
G
10ms
100 120 140
I
- NanoCoulombs
D
V
- Amperes
DS
-
-80
10
- Volts
1ms
DC, 100ms
-100
IXTK170P10P
IXTX170P10P
160 180 200
100µs
-120
IXYS REF: T_170P10P(B9)03-25-09-C
125ºC
T
J
= - 40ºC
25ºC
-140
25µs
220 240
-
-160
100