IXTK170P10P IXYS, IXTK170P10P Datasheet - Page 5

• Manufacturer Part Number: IXTK170P10P
• Description: MOSFET P-CH 100V 170A TO-264
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTK170P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 12600pF @ 25V
• Power - Max: 890W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -170
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 12600
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 176
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTK170P10P
IXTX170P10P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_170P10P(B9)03-25-09-C