IXFM50N20 IXYS, IXFM50N20 Datasheet - Page 2

• Manufacturer Part Number: IXFM50N20
• Description: MOSFET N-CH 200V 50A TO-204AE
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFM50N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 32 s
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 4400
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-204
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1244366

© 2000 IXYS All rights reserved
Symbol
(T
R
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
d(off)
f
r
rr
TO-268AA (D
fs
SD
DS(on)
oss
thJC
thCK
iss
rss
g(on)
gs
gd
RM
J
= 25°C, unless otherwise specified)
Test Conditions
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
V
V
R
V
(TO-247 and TO-204 Case styles)
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
-di/dt = 100 A/ms,
V
F
F
R
GS
DS
GS
GS
GS
GS
G
= 25A,
= I
3
= 100 V
PAK)
= 10 V, I
= 10 V; I
= 0 V, V
= 10 V, V
= 1 W (External)
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
DS
D
D
DS
DS
= 0.5 I
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
D25
DSS
DSS
, pulse test
JM
, I
, I
D
D
= 0.5 I
= 0.5 I
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
42N20
50N20
58N20
IXFH/IXFM42N20
IXFH/IXFM50N20
(T
42N20
50N20
58N20
42N20
50N20
58N20
T
T
T
T
T
T
Dim.
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
J
D25
D25
J
J
J
J
J
J
2
= 25°C, unless otherwise specified)
1
2
1
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
13.80 14.00
15.85 16.05
18.70 19.10
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5.45 BSC
Millimeter
4.9
2.7
.02
1.9
4,881,106
4,931,844
0.25 BSC
.4
Min.
Max.
Min. Typ.
1.45
13.6
2.70
1.40
1.15
4.10
20
5.1
2.9
.25
2.1
.65
Characteristic Values
Characteristic Values
5,017,508
5,034,796
Typ.
4400
0.25
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min. Max.
800
285
190
32
18
15
72
16
35
95
.75
1.5
2.6
Inches
.215 BSC
.010 BSC
19
23
.057
.551
.632
.535
.752
.106
.055
.045
.161
.201
.114
.010
.026
.83
0.42 K/W
220
110
5,049,961
5,063,307
0.060 W
0.045 W
0.040 W
Max.
168
200
232
200
300
25
20
90
25
50
1.5
42
50
58
Max.
IXFH/IXFM58N20 IXFT50N20
K/W
nC
nC
nC
mC
mC
pF
pF
pF
ns
ns
ns
ns
ns
ns
S
A
A
A
A
A
A
V
A
A
5,187,117
5,237,481
TO-204 AE (IXFM) Outline
TO-247 AD (IXFH) Outline
Min. Recommended Footprint
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
Dim. Millimeter
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
38.61 39.12
30.15
10.67 11.17
16.64 17.14
11.18 12.19
25.16 26.66
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
Min.
6.40 11.40
1.45
1.52
5.21
3.84
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
-
- 22.22
Max.
BSC
1.60
3.43
5.71
4.19
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
IXFT58N20
Min.
1.520 1.540
0.252 0.449
0.057 0.063
0.060 0.135
1.187
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
Min.
Inches
Inches
- 0.875
0.177
Max.
Max.
BSC
2 - 4