IXFM50N20 IXYS, IXFM50N20 Datasheet - Page 3

• Manufacturer Part Number: IXFM50N20
• Description: MOSFET N-CH 200V 50A TO-204AE
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFM50N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 32 s
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 4400
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-204
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1244366

© 2000 IXYS All rights reserved
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
1
-25
= 25°C
25
58N20
50N20
42N20
Case Temperature
2
DS(on)
0
50
3
V
T
25
vs. Drain Current
GS
I
C
D
V
4
= 10V
- Degrees C
75
- Amperes
DS
50
- Volts
5
100
6
75
V
GS
125
V
7
= 15V
100 125 150
GS
= 10V
8
IXFH/IXFM42N20
IXFH/IXFM50N20
5V
150
9V
8V
7V
6V
9
175
10
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
90
80
70
60
50
40
30
20
10
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
IXFH/IXFM58N20 IXFT50N20
0
1
-25
-25
V
GS(th)
of Drain to Source Resistance
Breakdown and Threshold Voltage
2
T
J
0
0
= 25°C
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
= 25A
50
50
- Volts
5
6
75
75
7
100 125 150
100 125 150
IXFT58N20
BV
8
DSS
9
10
3 - 4