2SK3564(Q) Toshiba, 2SK3564(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3564(Q)
• Description: MOSFET N-CH 900V 3A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3564(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 Ohm @10V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 400 W
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK3564Q

10000
1000
100
10
60
40
20
20
16
12
−80
1
0
8
4
0
0.1
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
PULSE TEST
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
V GS = 10 V
40
CAPACITANCE – V
0
1
R
DS (ON)
P
D
40
80
3
– Tc
5
– Tc
10
80
DS
0.8
120
I D = 3 A
DS
120
30 50
C rss
C oss
C iss
(V)
1.5
160
100
160
4
500
400
300
200
100
0.5
0.3
0.1
10
0
−80
5
3
1
5
4
3
2
1
0
0
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
COMMON SOURCE
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
PULSE TEST
−40
4
Tc = 25°C
DYNAMIC INPUT / OUTPUT
−0.4
V DS
10
CHARACTERISTICS
0
8
3
I
V GS
DR
V
th
−0.8
– V
V GS =1, 0, −1 V
40
12
– Tc
200
DS
V DD = 100 V
COMMON SOURCE
I D = 3 A
Tc = 25°C
PULSE TEST
80
16
−1.2
g
DS
(nC)
120
2009-09-29
20
2SK3564
(V)
400
−1.6
160
24
20
16
12
8
4
0