2SK3497(F) Toshiba, 2SK3497(F) Datasheet - Page 3

• Manufacturer Part Number: 2SK3497(F)
• Description: MOSFET N-CH 180V 10A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3497(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 180V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.1V @ 1mA
• Input Capacitance (ciss) @ Vds: 2400pF @ 30V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -

10000
1000
100
100
0.1
20
16
12
10
10
8
4
0
1
0.1
0.1
0
Common source
V DS = 10 V
Pulse test
Common source
V GS = 0 V
f=1 MHZ
Tc = 25°C
4
Drain-source voltage V
Drain-source voltage V
2
3.5
Drain current I
Capacitance – V
1
4
⎪Y
I
D
Tc = 100°C
fs
– V
⎪ – I
1
DS
D
6
D
25
10
DS
DS
DS
(A)
V GS = 2.5 V
Common source
Tc = 25°C
Pulse test
(V)
−55
(V)
8
3
C rss
C oss
C iss
100
10
10
3
150
120
10
90
60
30
0
8
6
4
2
3
2
1
0
0
−80
0
0
Common source
V GS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
−40
Gate-source voltage V
Case temperature Tc
Case temperature Tc
40
1
0
Tc = 100°C
V
DS (ON)
I
D
P
D
– V
I D = 10 A
80
40
2
– Tc
GS
– Tc
−55
80
GS
25
(°C)
(°C)
120
5
3
(V)
120
2.5
2009-01-27
2SK3497
160
160
4