RHK005N03T146 Rohm Semiconductor, RHK005N03T146 Datasheet - Page 2

• Manufacturer Part Number: RHK005N03T146
• Description: MOSFET N-CH 30V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of RHK005N03T146

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Transistor Case Style: SOT-346
• No. Of Pins: 3
• Svhc: No SVHC
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RHK005N03T146TR

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Y
GSS
DSS
t
t
oss
SD
iss
rss
r
fs
f
∗
∗
∗
∗
∗
∗
Min.
Min.
1.0
0.5
30
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
350
510
600
45
20
10
10
10
15
30
−
−
−
−
−
−
Max.
Max.
±10
550
720
840
1.2
2.5
−
1
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
I
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
= 0.16A, V
= 1mA, V
= 500mA, V
= 500mA, V
= 500mA, V
= 250mA
=60Ω
=10Ω
= 30V, V
= 10V, I
= 10V, I
= 10V
= ±20V, V
=0V
= 10V
15 V
Conditions
Conditions
GS
D
D
GS
GS
= 1mA
= 500mA
=0V
DS
GS
GS
GS
=0V
=0V
=0V
= 10V
= 4.5V
= 4V
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