FDN352AP Fairchild Semiconductor, FDN352AP Datasheet - Page 2

• Manufacturer Part Number: FDN352AP
• Description: MOSFET P-CH 30V 1.3A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN352AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN352AP

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