FDN352AP Fairchild Semiconductor, FDN352AP Datasheet - Page 8
![MOSFET P-CH 30V 1.3A SSOT-3](/photos/5/45/54562/261-supersot-3_sml.jpg)
FDN352AP
Manufacturer Part Number
FDN352AP
Description
MOSFET P-CH 30V 1.3A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN352AP.pdf
(5 pages)
Specifications of FDN352AP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
1.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
1.3 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN352AP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
FSC
Quantity:
69 000
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Quantity:
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Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
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Manufacturer:
ON/安森美
Quantity:
20 000
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