RTM002P02T2L Rohm Semiconductor, RTM002P02T2L Datasheet
RTM002P02T2L
Manufacturer Part Number
RTM002P02T2L
Description
MOSFET P-CH 20V 200MA VMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.RTM002P02T2L.pdf
(3 pages)
Specifications of RTM002P02T2L
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
VMT3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.5 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.2 A
Power Dissipation
150 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RTM002P02T2LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RTM002P02T2L
Manufacturer:
Rohm Semiconductor
Quantity:
29 494
Company:
Part Number:
RTM002P02T2L
Manufacturer:
AKM
Quantity:
5 000
Part Number:
RTM002P02T2L
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
2.5V Drive Pch MOS FET
RTM002P02
Silicon P-channel MOS FET
1) Low On-resistance.
2) Small package (VMT3).
3) 2.5V drive.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Type
RTM002P02
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
8000
T2L
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
P
DSS
GSS
I
DP
D
D
∗1
∗2
∗
−55 to +150
Limits
Limits
±0.2
±0.4
0.15
833
−20
±12
150
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
External dimensions (Unit : mm)
(1)Gate
(2)Source
(3)Dr
VMT3
Inner circuit
ain
°C/W
Unit
Unit
(1)
°C
°C
W
V
V
A
A
∗1
0.22
Abbreviated symbol : TW
(3)
0.32
0.4 0.4
( 1 )
1.2
0.8
(3)
(2)
( 2 )
∗2
RTM002P02
0.5
(1) Gate
(2) Source
(3) Drain
0.13
1/2
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RTM002P02T2L Summary of contents
Page 1
Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure Silicon P-channel MOS FET Features 1) Low On-resistance. 2) Small package (VMT3). 3) 2.5V drive. Applications Switching Packaging specifications Package Taping Type Code T2L Basic ordering unit (pieces) 8000 RTM002P02 Absolute maximum ...
Page 2
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...