FDZ197PZ Fairchild Semiconductor, FDZ197PZ Datasheet - Page 2

• Manufacturer Part Number: FDZ197PZ
• Description: MOSFET P-CH 20V 3.8A 6-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ197PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ197PZTR

©2009 Fairchild Semiconductor Corporation
FDZ197PZ Rev.C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
∆T
∆T
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 65 °C/W when mounted on
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
pad of 2 oz copper.
= 25 °C unless otherwise noted
V
V
V
V
f = 1 MHz
I
I
V
V
V
I
V
V
V
V
V
T
V
V
I
D
D
D
F
DD
GS
GS
DS
GS
GS
GS
GS
GS
GS
GS
J
DD
DS
GS
= -3.8 A, di/dt = 100 A/µs
= -250 µA, V
= -250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
=125 °C
= 0V to -4.5V
= -10 V, V
= -10 V, I
= -4.5 V, R
= -16 V, V
= 0 V, I
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
= -4.5 V, I
= -5 V, I
2
DS
Test Conditions
, I
S
D
D
= -1.1 A
D
DS
D
D
D
D
D
= -3.8 A
= -250 µA
GS
GS
GS
= -3.8 A,
GEN
= -2.0 A
= -2.0 A
= -1.0 A
= -1.0 A
= -2.0 A,
= 0 V
= 0 V,
= 0 V
= 0 V
I
V
D
= 6 Ω
DD
= -3.8 A
= -10 V,
(Note 2)
θJC
is guaranteed by design while R
b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.
Min
-0.4
-20
1180
Typ
-0.5
-0.6
194
344
190
160
280
-10
311
2.7
5.8
5.9
1.5
4.7
46
53
59
68
54
21
18
θCA
1570
Max
-1.2
±10
-1.0
255
225
448
310
550
498
64
71
79
95
84
12
12
25
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
µA
µA
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V